K04N60(2007) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K04N60
(Rev.:2007)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP04N60

0.6mJ

0.5mJ

*) Eon and Ets include losses

due to diode recovery.

0.4mJ

E ts *

0.3mJ

0.2mJ

0.1mJ

Eon*

Eoff

0.0mJ

0A

2A

4A

6A

8A 10A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 67Ω,

Dynamic test circuit in Figure E)

0.4mJ

*) Eon and Ets include losses

due to diode recovery.

0.3mJ

Ets*

0.2mJ

0.1mJ

Eoff

Eon*

0.0mJ

0Ω

50Ω 100Ω 150Ω 200Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 4A,

Dynamic test circuit in Figure E)

0.3mJ

*) Eon and Ets include losses

due to diode recovery.

0.2mJ

Ets*

0.1mJ

Eon*

E off

0.0mJ

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 4A, RG = 67Ω,

Dynamic test circuit in Figure E)

D=0.5

100K/W

0.2

0.1

0.05

10-1K/W 0.02

0.01

10-2K/W

R,(K/W)

0.815

0.698

0.941

0.046

R1

τ, (s)

0.0407

5.24*10-3

4.97*10-4

4.31*10-5

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

7

Rev. 2.2 Sep 07

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