K04N60(2007) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

K04N60
(Rev.:2007)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP04N60

8A

2.0V

IF = 8A

6A

4A

150°C

100°C

25°C

2A

-55°C

0A

0.0V

0.5V

1.0V

1.5V

2.0V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

1.5V

IF = 4A

1.0V

-40°C 0°C 40°C 80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

D=0.5

100K/W 0.2

0.1

0.05

0.02

10-1K/W

0.01

single pulse

R,(K/W)

0.128

0.387

0.346

1.360

2.280

τ, (s)

0.085

7.30*10-3

4.69*10-3

7.34*10-4

5.96*10-5

R1

R2

C1=τ1/R1 C2=τ2/R2

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

10

Rev. 2.2 Sep 07

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