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SK12 Просмотр технического описания (PDF) - Cystech Electonics Corp.

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производитель
SK12 Datasheet PDF : 5 Pages
1 2 3 4 5
CYStech Electronics Corp.
1.0Amp. Surface Mount Schottky Barrier Diodes
SK12SB thru SK1BSB
Spec. No. : C752SB
Issued Date : 2012.09.20
Revised Date :
Page No. : 1/5
Features
For surface mounted applications.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0.
Low leakage current.
High surge capability.
High temperature soldering: 250°C/10 seconds at terminals.
Exceeds environmental standards of MIL-S-19500/228.
Mechanical Data
Case: Molded plastic, JEDEC DO-214AA/SMB.
Terminals: Solder plated, solderable per MIL-STD-750 method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.093 gram.
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%. )
Parameter
Symbol SK12
SK13 SK14
Type
SK15 SK16 SK18
SK1B Units
Repetitive peak reverse voltage VRRM 20
30
40
50 60
80
100
V
Maximum RMS voltage
VRMS
14
21
28
35 42
56
70
V
Maximum DC blocking voltage
VR
20 30 40 50 60 80 100 V
Maximum instantaneous forward
Voltage @ IF=1A (Note 1)
VF
0.5
0.7
0.85
V
Maximum average forward
rectified current @ TL=100°C
IO
1
A
Peak forward surge current @
8.3ms, single half sine-wave
superimposed on rated load
IFSM
30
A
(JEDEC method)
Maximum DC reverse current at
Rated DC blocking TJ=25°C
IR
voltage
TJ=100°C
0.5
mA
10
Typical thermal resistance,
junction to ambient
Rth, JA
40
°C/W
Typical diode junction
capacitance @ f=1MHz and
CJ
120
pF
applied 4V reverse voltage
Storage temperature
Tstg
-55 ~ +150
°C
Operating temperature
TJ
-55 ~ +125
°C
SK12SB thru SK1BSB
CYStek Product Specification

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