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SIS402DN Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание
производитель
SIS402DN
Vishay
Vishay Semiconductors Vishay
SIS402DN Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
60
50
60
40
40
Package Limited
30
20
20
10
0
0
0
25
50
75
100 125 150
25
TC - Case Temperature (°C)
Current Derating*
SiS402DN
Vishay Siliconix
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68684
S09-1086-Rev. C, 15-Jun-09
www.vishay.com
5

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