SIS402DN Просмотр технического описания (PDF) - Vishay Semiconductors
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SIS402DN Datasheet PDF : 13 Pages
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SiS402DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
60
50
40
30
20
10
0
0.0
VGS = 10 V thru 4 V
VGS = 3 V
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
TC = - 55 °C
8
6
TC = 25 °C
4
2
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.010
2100
0.008
0.006
0.004
VGS = 4.5 V
VGS = 10 V
0.002
0
10 20 30 40 50 60 70
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1800
Ciss
1500
1200
900
600
Coss
300
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 19 A
8
VDS = 15 V
1.8
ID = 19 A
1.6
1.4
6
VGS = 10 V, 4.5 V
VDS = 24 V
1.2
4
1.0
2
0.8
0
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68684
S09-1086-Rev. C, 15-Jun-09
www.vishay.com
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