SIS402DN(2008) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SIS402DN
(Rev.:2008)

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

SiS402DN

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.015

0.012

ID = 19 A

TJ = 150 °C

TJ = 25 °C

10

0.009

0.006

0.003

TJ = 125 °C

TJ = 25 °C

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.4

2.2

2.0

ID = 250 µA

1.8

1.6

1.4

1.2

1.0

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0.000

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

50

40

30

20

10

0

0.01

0.1

1

10

100

600

Time (s)

Single Pulse Power (Junction-to-Ambient)

100

Limited by RDS(on)*

IDM Limited

100 µs

10

ID(on)

Limited

1

1 ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

1s

10 s

DC

BVDSS

Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

4

Document Number: 68684

S-81733-Rev. B, 04-Aug-08

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