SIA415DJ Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
SIA415DJ Datasheet PDF : 9 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
5
VGS = 5 V thru 3 V
25
4
VGS = 2.5 V
20
3
15
2
10
VGS = 2 V
1
5
VGS = 1.5 V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
SiA415DJ
Vishay Siliconix
TC = -- 55 °C
TC = 25 °C
TC = 125 °C
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
VGS = 2.5 V
0.04
0.02
VGS = 4.5 V
0
0
5
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
2100
1800
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 8.4 A
8
6
4
VDS = 10 V
VDS = 16 V
2
0
0
8
16
24
32
Qg - Total Gate Charge (nC)
Gate Charge
1.4
ID = 5.6 A
1.3
1.2
VGS = 4.5 V, 2.5 V
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S-80435-Rev. B, 03-Mar-08
3
Document Number: 69512
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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