SI9410BDY-T1-GE3(2009) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SI9410BDY-T1-GE3
(Rev.:2009)

N-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

Si9410BDY

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.4

50

0.2

40

ID = 250 µA

0.0

30

- 0.2

20

- 0.4

- 0.6

10

- 0.8

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

10- 3

10- 2 10- 1

1

10

Time (s)

Single Pulse Power

100

Limited by RDS(on)*

IDM Limited

2

1

Duty Cycle = 0.5

P(t) = 0.0001 s

10

P(t) = 0.001 s

1

ID(on)

Limited

P(t) = 0.01 s

P(t) = 0.1 s

0.1

TA = 25 °C

Single Pulse

BVDSS Limited

P(t) = 1 s

P(t) = 10 s

DC

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VDS > minimum VGS at which RDS(on) is specified

Safe Operating Area

100 600

0.2

0.1

0.1

0.05

0.02

0.01

10- 4

Notes:

PDM

Single Pulse

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = R thJA = 70 °C/W

3. T JM - TA = PDMZthJA(t)

4. Surface Mounted

10- 3

10- 2

10- 1

1

10

Square Wave Pulse Duration (s)

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com

4

Document Number: 72269

S09-0870-Rev. C, 18-May-09

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