SI9410BDY(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI9410BDY Datasheet PDF : 5 Pages
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New Product
Si9410BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
0.035
0.030
0.025
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
0.005
0.000
0
5
10
15
20
25
30
ID - Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 8.1 A
8
1200
Capacitance
1000
Ciss
800
600
400
Coss
200
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 8.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
TJ = 150_C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 8.1 A
TJ = 25_C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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