SI9410BDY(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI9410BDY Datasheet PDF : 5 Pages
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Si9410BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 8.1 A
VGS = 4.5 V, ID = 6.9 A
VDS = 15 V, ID = 8.1 A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 8.1 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
3.0
V
"100
nA
1
mA
5
30
A
0.019
0.024
W
0.026
0.033
20
S
0.8
1.2
V
15
23
3.2
nC
2.5
10
15
15
25
30
45
ns
11
20
25
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 10 thru 5 V
4V
24
Transfer Characteristics
30
24
18
18
12
6
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
12
TC = - 125_C
6
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
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2
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
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