SI9410BDY(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI9410BDY Datasheet PDF : 5 Pages
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New Product
N-Channel 30-V (D-S) MOSFET
Si9410BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.024 @ VGS = 10 V
0.033 @ VGS = 4.5 V
ID (A)
8.1
6.9
FEATURES
D TrenchFETr Power MOSFETS
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si9410BDY
Si9410BDY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
8.1
6.2
6.5
5.0
30
2.1
1.2
2.5
1.5
1.6
0.9
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
Symbol
RthJA
RthJF
Typical
40
70
20
Maximum
50
85
24
Unit
_C/W
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