SI9410DY Просмотр технического описания (PDF) - TY Semiconductor
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SI9410DY Datasheet PDF : 2 Pages
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■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250 μA
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55℃
On-State Drain Currentb *
ID(on) VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 7 A
Drain-Source On-State Resistance *
rDS(on) VGS = 5 V, ID = 4 A
VGS = 4.5 V, ID = 3.5 A
Forward Transconductanceb *
gfs VDS = 15 V, ID = 7 A
Diode Forward Voltageb *
VSD IS = 2 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 10 V, ID = 7 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr VDD = 25 V, RL = 25 Ω
Turn-Off Delay Time
td(off) ID = 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr IF = 2 A, di/dt = 100 A/μs
* Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
■ Marking
Marking
9410
MOSFIECICT
Product specification
SI9410DY
Min Typ Max Unit
1.0
V
±100 nA
2
μA
25
30
A
0.024 0.030 Ω
0.030 0.040 Ω
0.032 0.050 Ω
15
S
0.72 1.1
V
24
50
2.8
nC
4.6
14
30
10
60
46
150 ns
17
140
60
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