SI4953ADY Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4953ADY Datasheet PDF : 5 Pages
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Dual P-Channel 30-V (D-S) MOSFET
Si4953ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.053 at VGS = - 10 V
0.090 at VGS = - 4.5 V
ID (A)
- 4.9
- 3.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4953ADY-T1-E3 (Lead (Pb)-free)
Si4953ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
- 4.9
- 3.9
- 3.7
- 2.9
A
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
52
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 71091
S09-0870-Rev. C, 18-May-09
www.vishay.com
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