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SE1000W Просмотр технического описания (PDF) - SiGe Semiconductor, Inc.

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Компоненты Описание
производитель
SE1000W
SIGE
SiGe Semiconductor, Inc. SIGE
SE1000W Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SE1000W
LightChargerTM155 Mb/s Transimpedance Amplifier
Final
Applications Information
For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the
first diagram below.
Note that the two VCC1 pads (2, 10) are connected on-chip, as are the VEE1 pads (6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 and VCC2 pads are not connected on chip to VEE1
and VCC1 respectively, and must be bonded out separately.
Connections for differential operation:
+5 V
PIN
0 V or
–ve bias
1
VCC2
2 10
VCC1
3 TZ_IN
TZ Amplifier
SE1000W
VEE2
4
VEE1
67
0V
1 nF min
9
OUTP
OUTN 8
ACGND
5
NC
To 50 O loads,
AC coupled
Connections for single-ended operation:
+5 V
PIN
0 V or
–ve bias
1
VCC2
2 10
VCC1
3 TZ_IN
TZ Amplifier
SE1000W
VEE2
4
VEE1
67
0V
1 nF min
9
OUTP
OUTN 8
ACGND
5
1 nF
To 50 O load,
AC coupled
NC
40-DST-01 § Rev 1.5 § May 24/02
8 of 9

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