SD453R16S30MC Просмотр технического описания (PDF) - Vishay Semiconductors
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SD453R16S30MC Datasheet PDF : 11 Pages
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SD453N/R Series
Vishay High Power Products Fast Recovery Diodes
(Stud Version), 400/450 A
1E4
SD453N/ R..S20 Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
dv/ d t = 1000V/ µs
di/ dt = 100A/ µs
10 joules per pulse
6
4
2
1
1E3
tp
0.6
0.4
0.2
1E4
6000
1000
400
200
100
50 Hz
1500
2000
1E3
3000
4000
6000
SD453N/ R..S30 Series
Sinusoida l Pulse
TC= 70°C, VRRM = 800V
tp
dv/ d t = 1000V/ us
1E2
1E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 31 - Frequency Characteristics
1E4
tp
1E3
1E2
1E1
1000
600 400 200
1500
2000
100 50 Hz
3000
4000
6000
SD453N/ R..S20 Series
Trapezoida l Pulse
TC= 70°C, VRRM = 800V
dv/ dt = 1000V/ us,
di/ dt = 100A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
10 joules per pulse
6
4
2
1E3
1
0.8
0.6
SD453N/ R..S30 Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
tp
dv/ dt = 1000V/ µs; di/ dt = 300A/ µs
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1
0.8
0.6
10 joules per pulse
46
2
0.4
1E3
0.2
0.1
1E4
tp
1E3
400
600
1000
200 100 50 Hz
1E2
1E1
SD453N/ R...S30 Series
Sinusoidal Pulse
TJ= 150°C, VRRM = 800V
tp
dv/ d t = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E2
1E1
2000
3000
4000
SD453N/ R..S30 Series
Trapezoidal Pulse
T = 70°C, VRRM = 800V
dv/ dt = 1000V/ us,
di/ dt = 300A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
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Document Number: 93176
Revision: 08-Apr-08
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