SD1899 Просмотр технического описания (PDF) - Advanced Semiconductor
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SD1899 Datasheet PDF : 1 Pages
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SD1899
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1899 is a Common Base
Device Designed for class C
Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input/Output Matching
• Diffused Ballast Resistors
MAXIMUM RATINGS
IC
3.8 A
VCBO
50 V
VCEO
25 V
PDISS
66 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
6.5 °C/W
PACKAGE STYLE .250 2L FG
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
IC = 25 mA
BVEBO
IE = 10 mA
ICEO
VCE = 25 V
hFE
VCE = 8.0 V
IC = 400 mA
COB
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
50
3.5
25
20
60
100
24
UNITS
V
V
mA
---
pF
PG
VCC = 28 V Pout = 30 W
f = 1.6 – 1.7 GHz
7.0
8.2
dB
ηC
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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