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SB110(2013) Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
SB110
(Rev.:2013)
Vishay
Vishay Semiconductors Vishay
SB110 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
SB120, SB130, SB140, SB150, SB160
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
1.0 A
20 V, 30 V, 40 V, 50 V, 60 V
50 A
0.48 V, 0.65 V
125 °C, 150 °C
DO-204AL
Diode variations
Single
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB120
Maximum repetitive peak reverse voltage
VRRM
20
Maximum RMS voltage
VRMS
14
Maximum DC blocking voltage
VDC
20
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction temperature range
dV/dt
TJ
Storage temperature range
TSTG
SB130
30
21
30
SB140
40
28
40
1.0
50
10 000
- 65 to + 125
- 65 to + 150
SB150
50
35
50
SB160
60
42
60
- 65 to + 150
UNIT
V
V
V
A
A
V/μs
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL SB120 SB130
Maximum instantaneous
forward voltage
1.0 A
VF (1)
0.48
Maximum instantaneous reverse
current at rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR (1)
10
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
SB140
0.50
SB150 SB160 UNIT
0.65
V
mA
5.0
Revision: 13-Aug-13
1
Document Number: 88715
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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