S8050L-X-T92-B Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

S8050L-X-T92-B

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

Unisonic Technologies 

S8050

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

VCEO

30

V

20

V

Emitter-Base Voltage

Collector Current

VEBO

IC

5

V

700

mA

Collector Dissipation(TA=25°C)

PC

Junction Temperature

TJ

1

W

150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

TEST CONDITIONS

BVCBO IC=100A, IE=0

BVCEO IC=1mA, IB=0

BVEBO IE=100μA, Ic=0

ICBO VCB=30V, IE=0

IEBO

hFE1

VEB=5V, IC=0

VCE=1V, IC=1mA

hFE2 VCE=1V, IC=150 mA

hFE3 VCE=1V, IC=500mA

VCE(SAT) IC=500mA, IB=50mA

VBE(SAT) IC=500mA, IB=50mA

VBE VCE=1V, IC=10mA

fT VCE=10V, IC=50mA

Cob VCB=10V, IE=0, f=1MHz

 CLASSIFICATION OF hFE2

RANK

RANGE

C

120-200

D

160-300

MIN TYP MAX UNIT

30

V

20

V

5

V

1 μA

100 nA

100

120

400

40

0.5 V

1.2 V

1.0 V

100

MHz

9.0

pF

E

280-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-013.D

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