RMB2S Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

RMB2S

Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

Vishay Semiconductors 

www.vishay.com

RMB2S, RMB4S

Vishay General Semiconductor

10

Pulse Width = 300 µs

1 % Duty Cycle

1

TJ = 150 °C

0.1

TJ = 25 °C

0.01

0.3

0.5

0.7

0.9

1.1

1.3

1.5

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

100

10

TJ = 125 °C

30

TJ = 25 °C

25

f = 1.0 MHz

Vsig = 50 mVp-p

20

15

10

5

0

0.1

1

10

100

1000

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

1

0.1

TJ = 25 °C

0.01

0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.029 (0.74)

0.017 (0.43)

TO-269AA (MBS)

Mounting Pad Layout

0.023 MIN.

(0.58 MIN.)

0.161 (4.10)

0.144 (3.65)

0.106 (2.70)

0.090 (2.30)

0.114 (2.90)

0.094 (2.40)

0.272 (6.90)

0.252 (6.40)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0 to 8°

0.0075 (0.19)

0.0065 (0.16)

0.038 (0.96)

0.019 (0.48)

0.030 MIN.

(0.76 MIN.)

0.205 (5.21)

0.195 (4.95)

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.272 MAX.

(6.91 MAX.)

0.105 (2.67)

0.095 (2.41)

Revision: 19-Aug-13

3

Document Number: 88705

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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