RM50HG-12S Просмотр технического описания (PDF) - Mitsumi
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RM50HG-12S Datasheet PDF : 3 Pages
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RM50HG-12S
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
• IDC DC current .................................. 50A
• VRRM Repetitive peak reverse voltage
................ 600V
• trr
Reverse recovery time ............. 0.2µs
• ONE ARM
• Non-Insulated Type
APPLICATION
For snubber circuit (IPM or IGBT module)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
20.5MAX.
φ3.2±0.2
5±0.3
Non-Isolation side (metal) 4
2.5±0.3
1
2
3
4
1 23
1±0.2
5.45±0.5
2±0.3
5.45±0.5
0.6±0.2
Sep.2001
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