RM500HA-M Просмотр технического описания (PDF) - Mitsumi
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RM500HA-M Datasheet PDF : 3 Pages
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MITSUBISHI DIODE MODULES
RM500HA-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
M
VRRM
Repetitive peak reverse voltage
400
VRSM
Non-repetitive peak reverse voltage
480
VR (DC)
Reverse DC voltage
320
Voltage class
H
24
800
1200
960
1350
640
960
Symbol
IF (RMS)
IF (AV)
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=90°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
—
Mounting torque
Main terminal screw M8
Mounting screw M6
—
Weight
Typical value
2H
1600
1700
1280
Ratings
785
500
10000
4.2 × 105
1000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.47~1.96
15~20
450
Unit
V
V
V
Unit
A
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=1500A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
Limits
Typ.
—
—
—
—
Max.
40
1.25
0.1
0.08
10
—
—
Unit
mA
V
°C/ W
°C/ W
MΩ
Feb.1999
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