RGF1A Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
RGF1A Datasheet PDF : 4 Pages
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RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com
Vishay General Semiconductor
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
TJ = 25 °C
Pulse Width = 300 µs
0.1
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
TJ = 125 °C
1
TJ = 100 °C
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GF1 (DO-214BA)
Cathode Band
0.066 (1.68)
0.040 (1.02)
1
0.1
0.01
Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
0.066 (1.68)
MIN.
Mounting Pad Layout
0.076 (1.93)
MAX.
0.187 (4.75)
0.167 (4.24)
0.118 (3.00)
0.100 (2.54)
0.015 (0.38)
0.0065 (0.17)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
MIN.
0.220 (5.58)
REF.
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Revision: 25-Aug-17
3
Document Number: 88697
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