RGF1A Просмотр технического описания (PDF) - Vishay Semiconductors
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RGF1A Datasheet PDF : 4 Pages
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RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast Switching Rectifier
Superectifier®
GF1 (DO-214BA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
30 A
VF
1.3 V
trr
150 ns, 250 ns, 500 ns
TJ max.
175 °C
Package
GF1 (DO-214BA)
Diode variations
Single
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: GF1 (DO-214BA), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Device marking code
RA
RB
RD
RG
RJ
RK
RM
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified current
at TL = 120 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IF(AV)
IFSM
Maximum full load reverse current, full cycle
average TA = 55 °C
IR(AV)
Operating junction and storage temperature range TJ, TSTG
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
100
200
400
600
800 1000
V
1.0
A
30
A
50
μA
-65 to +175
°C
Revision: 25-Aug-17
1
Document Number: 88697
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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