RB715F Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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RB715F Datasheet PDF : 2 Pages
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SCHOTTKY BARRIER DIODE
FEATURES:
Extra small power mold type.
Low VF
High reliability
MARKING: 3D
RB715F
SOT-323
Maximum Ratings @TA=25 ℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
VRM
VR
IFSM
IO
PD
Tj
Tstg
Limits
40
40
200
30
200
125
-40-125
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Unit
V
V
mA
mA
mW
℃
℃
Parameter
Reverse voltage leakage current
Symbol Test conditions
MIN
IR
VR=10V
TYP
MAX UNIT
1
μA
Forward voltage
Capacitance between terminals
VF
IF=1mA
CT
VR=1V, f=1MHz
0.37
V
2.0
pF
１
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
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