RB715F Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

RB715F

Schottky Barrier Diode

Galaxy Semi-Conductor 

Schottky Barrier Diode

FEATURES

 Extra small power mold type.

 Low VF.

 High reliability.

Pb

Lead-free

Production specification

RB715F

APPLICATIONS

 General purpose application.

ORDERING INFORMATION

Type No.

Marking

RB715F

3D

SOT-323

Package Code

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Peak reverse voltage

Diode reverse voltage

VRM

40

V

VR

40

V

Average forward current

IF

30

mA

Forward Surge Current

t=1μS

IFS

200

mA

Power Dissipation

Pd

150

mW

Junction temperature

Tj

125

℃

Storage temperature range

Tstg

-40 to +125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

MAX UNIT

Reverse breakdown voltage

V(BR)R

IR= 100μA

40

V

Reverse voltage leakage current IR

VR=10V

1

μA

Forward voltage

Diode capacitance

VF

IF=1mA

CD

VR=1V f=1MHz

370

mV

2.0

pF

F027

Rev.A

www.gmesemi.com

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