RB521S-30(Rev1.0) Просмотр технического описания (PDF) - ROHM Semiconductor
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Компоненты Описание
производитель
RB521S-30 Datasheet PDF : 3 Pages
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Diodes
Schottky barrier diode
RB521S-30
RB521S-30
zApplications
Low current rectification and high speed switching
zFeatures
1) Extremely small surface mounting type. (EMD2)
2) IO=200mA guaranteed despite the size.
3) Low VF.( VF=0.40V Typ. At 200mA )
zConstruction
Silicon epitaxial planar
zExternal dimensions (Units : mm)
CATHODE MARK
C
0.3±0.05
0.12±0.05
0.8±0.05
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
0.6±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
30
V
Mean rectifying current
IO
200
mA
Peak forward surge current∗ IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40~+125
°C
∗ 60Hz for 1
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Note) sensitive product handling required.
Min.
−
−
Typ.
−
−
Max.
0.50
30
Unit
Conditions
V
IF = 200mA
µA VR = 10V
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