RA35H1516M Просмотр технического описания (PDF) - Mitsumi
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RA35H1516M Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA35H1516M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
120
50
40
30
20
10
0
150
Pout @VGG=5V
ηt @Pout=30W
VDD=12.5V
Pin=50mW
ρin @Pout=30W
155 160 165
FREQUENCY f(MHz)
100
80
60
40
20
0
170
2nd, 3rd HARMONICS versus FREQUENCY
-20
VDD=12.5V
-30
Pin=50mW
Pout=30W @VGG control
-40
-50
2nd
-60
3rd
-70
150
155
160
165
170
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
12
50
Gp
40
Pout
10
8
30
6
20
10
0
-10
4
IDD
f=154MHz,
VDD=12.5V,
2
VGG=5V
0
-5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
12
50
Gp
Pout
10
40
8
30
20
10
0
-10
6
IDD
4
f=162MHz,
VDD=12.5V,
2
VGG=5V
0
-5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
12
f=154MHz,
50 VDD=12.5V,
10
VGG=5V
40
8
Pout
30
6
20
IDD
4
10
2
0
0
2
4
6
8 10 12 14
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
12
f=162MHz,
50 VDD=12.5V,
VGG=5V
40
10
Pout
8
30
6
20
IDD
4
10
2
0
0
2
4
6
8 10 12 14
DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
f=154MHz,
50 VDD=12.5V,
VGG=5V
40
Pout
10
8
30
6
IDD
20
4
10
2
0
0
2 2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
12
f=162MHz,
50
VDD=12.5V,
Pout
10
VGG=5V
40
8
30
6
IDD
20
4
10
2
0
0
2 2.5 3 3.5 4 4.5 5 5.5
GATE VOLTAGE VGG(V)
RA35H1516M
MITSUBISHI ELECTRIC
3/8
15 April 2003
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