R8008ANX(2011) Просмотр технического описания (PDF) - ROHM Semiconductor
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R8008ANX Datasheet PDF : 6 Pages
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Data Sheet
10V Drive Nch MOSFET
R8008ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 500
R8008ANX
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
Limits
800
30
8
32
8
32
4
4.2
50
150
55 to 150
www.DataSheet.co.kr
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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