PXT2907A Просмотр технического описания (PDF) - Philips Electronics
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PXT2907A Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
PXT2907A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
97
K/W
17
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = −50 V
−
IE = 0; VCB = −50 V; Tamb = 125 °C −
IC = 0; VEB = −5 V
−
IC = −0.1 mA; VCE = −1 V
75
IC = −1 mA; VCE = −1 V
100
IC = −10 mA; VCE = −1 V
100
IC = −150 mA; VCE = −2 V
100
IC = −500 mA; VCE = −2 V
50
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IE = ie = 0; VCB = −10 V; f = 1 MHz −
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
IC = −20 mA; VCE = −10 V;
200
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
−
IBoff = 15 mA
−
−
−
−
−
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
35
−
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
40
ns
12
ns
30
ns
365
ns
300
ns
65
ns
1999 Apr 14
3
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