PN2369 Просмотр технического описания (PDF) - Philips Electronics
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производитель
PN2369 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
PN2369; PN2369A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
collector cut-off current
IE = 0; VCB = 20 V
−
−
IE = 0; VCB = 20 V; Tamb = 125 °C −
−
emitter cut-off current
IC = 0; VEB = 4 V
−
−
DC current gain
IC = 10 mA; VCE = 1 V
40 −
PN2369
IC = 10 mA; VCE = 1 V;
Tamb = −55 °C
20 −
IC = 100 mA; VCE = 2 V
20 −
DC current gain
IC = 10 mA; VCE = 350 mV
40 −
PN2369A
IC = 10 mA; VCE = 350 mV;
Tamb = −55 °C
20 −
IC = 30 mA; VCE = 400 mV
30 −
IC = 100 mA; VCE = 1 V
20 −
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
−
PN2369
VBEsat
Cc
fT
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
−
−
PN2369A
IC = 10 mA; IB = 10 mA
−
−
IC = 30 mA; IB = 3 mA
−
−
IC = 100 mA; IB = 10 mA
−
−
base-emitter saturation voltage IC = 10 mA; IB = 1 mA
700 −
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
−
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 500 −
Switching times (between 10% and 90% levels); (see Fig.2)
400 nA
30 µA
100 nA
120
−
−
120
−
−
−
250 mV
200 mV
300 mV
250 mV
500 mV
850 mV
4
pF
−
MHz
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 3 mA;
IBoff = −1.5 mA
−
8
10 ns
−
−
4
ns
−
−
6
ns
−
10 20 ns
−
−
10 ns
−
−
10 ns
1999 Apr 14
3
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