PHP33NQ20T Просмотр технического описания (PDF) - Philips Electronics

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PHP33NQ20T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHP/PHB33NQ20T

N-channel TrenchMOS™ standard level FET

5

VGS(th)

(V)

4

3

2

max

typ

min

03aa32

10-1

ID

(A)

10-2

10-3

10-4

03aa35

min typ max

1

10-5

0

-60

0

60

120

180

Tj (°C)

10-6

0

2

4

6

VGS (V)

ID = 1 mA; VDS = VGS

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

Tj = 25 °C; VDS = 5 V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

10

VGS

(V)

8

ID = 25 A

Tj = 25 °C

VDS = 40 V

6

03ao16

100 V

160 V

4

2

0

0

10

20

30

40

QG (nC)

ID = 25 A; VDS = 40 V, 100 V and 160 V

Fig 11. Gate-source voltage as a function of gate charge; typical values.

9397 750 14003

Product data sheet

Rev. 01 — 8 November 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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