FS100UM-03 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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FS100UM-03 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 50A, VGS = 10V
ID = 50A, VGS = 10V
ID = 50A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
IS = 50A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ. Max.
30
—
—
V
—
—
±0.1
µA
—
—
0.1
mA
2.0
3.0
4.0
V
—
4.0
5.4
mΩ
—
0.20 0.27
V
—
80
—
S
—
6600
—
pF
—
2250
—
pF
—
1300
—
pF
—
90
—
ns
—
260
—
ns
—
350
—
ns
—
280
—
ns
—
1.0
1.5
V
—
—
1.00 °C/W
—
100
—
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 8V
100
TC = 25°C
Pulse Test
6V
80
60
5V
40
PD = 35W
20
4V
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10ms
2
102
100ms
7
5
3
1ms
2
101
10ms
7
5
DC
3
2
100 TC = 25°C
7 Single Pulse
5
3
5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 7V 6V
50
TC = 25°C
Pulse Test
40
5V
30
20
10
4V
0
0
0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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