NTE70 Просмотр технического описания (PDF) - NTE Electronics

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NTE70

Silicon NPN Transistor High Voltage Power Amp, Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Small–Signal Current Gain

hfe VCE = 10V, IC = 1A, f = 1MHz

3.0 – –

Collector–Base Capacitance

Rise Time

Storage Time

Fall Time

Cob VCB = 10V, IE = 0, f = 0.1MHz

tr

ts

VCC = 80V, IC = 20A,

IB1 = 2A, IB2 = 2A

tf

– – 600 pF

– – 0.35 µs

– – 0.80 µs

– – 0.25 µs

Base

.500

(12.7)

Emitter

.760 (19.3) Dia

.083 (2.1) Dia

.984

(25.0)

.129 (3.3)

5/16–24 UNF

.865

(21.95)

Collector/Stud

.083 (2.1) Dia

.503

(12.6)

.105

(2.65)

Max

.477

(12.1)

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