NTP27N06 Просмотр технического описания (PDF) - ON Semiconductor
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NTP27N06 Datasheet PDF : 12 Pages
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NTP27N06, NTB27N06
56
VGS = 10 V
48
9V
40
8V
32
7.5 V
7V
6.5 V
6V
24
5.5 V
16
5V
8
4.5 V
0
0
1
2
3
4
5
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
56
VDS w 10 V
48
40
32
24
16
TJ = 25°C
8 TJ = 100°C
TJ = –55°C
0
2.6 3.4 4.2
5
5.8 6.6 7.4 8.2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.095
VGS = 10 V
0.085
0.075
0.065
0.055
0.045
0.035
0.025
TJ = 100°C
TJ = 25°C
TJ = –55°C
0.015
0
8
16
24
32
40
48
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0.095
VGS = 15 V
0.085
0.075
0.065
0.055
TJ = 100°C
0.045
0.035
TJ = 25°C
0.025
TJ = –55°C
0.015
56
0
8
16
24
32
40
48 56
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.2
ID = 13.5 A
VGS = 10 V
1.8
1.4
1
10000
VGS = 0 V
1000
100
10
TJ = 150°C
TJ = 125°C
TJ = 100°C
0.6
–50 –25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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