NTP125N02R Просмотр технического описания (PDF) - ON Semiconductor
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NTP125N02R Datasheet PDF : 7 Pages
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NTB125N02R, NTP125N02R
7000
10
VDS = 0 V VGS = 0 V
6000 Ciss
5000
8.0
VGS
4000 Crss
6.0
3000
Ciss
2000
1000
TJ = 25°C
0
10
5
0
Coss
Crss
5
10
15
20
VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4.0
Q1
QT
Q2
2.0
0
0
ID = 40 A
TJ = 25°C
8
16
24
32
40
48
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
VDS = 10 V
ID = 40 A
VGS = 10 V
60
VGS = 0 V
50 TJ = 25°C
40
100
30
tr
td(off)
tf
10
td(on)
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
20
10
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
100 ms
1 ms
10 ms
10
1.0
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1.0
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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