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NIS6201

Floating, Regulated Charge Pump

ON Semiconductor 

NIS6201

Floating, Regulated Charge

Pump

The NIS6201 charge pump is designed to provide economical, low

level power to circuits above ground level potential, such as the drive

for ORing diodes. It is a very cost−effective replacement for a small,

isolated, switching power supply.

It contains an internal linear regulator, and a versatile charge pump

to allow bias voltage supplies to be transferred from a ground

referenced source to a higher potential. The design of the charge

pump allows for any isolation voltage required, as the high voltage

components are external to the pump and can be sized accordingly.

Features

• Integrated Linear Regulator and Charge Pump

• Thermal Limit Protection

• Adjustable Voltage Output

• High Voltage Isolation

• This is a Pb−Free Device

Applications

• ORing Diodes

• Floating Supervisory Circuits

• LED Driver

VCC

http://onsemi.com

8

1

SOIC−8 NB

CASE 751

MARKING

DIAGRAM

8

6201

AYWW

G

1

6201

A

Y

WW

G

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

PIN CONNECTIONS

N/C 1

N/C 2

SIGGND 3

COMP 4

8 PWRGND

7 DRIVE

6 VREG

5 VCC

(Top View)

0.50 V

Regulator

+

15 V

−

+

−

150 mV

Overcharge

1.0 MHz

Oscillator

DRIVE

ORDERING INFORMATION

Device

Package

Shipping†

NIS6201DR2G

SOIC−8 3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SIGGND

COMP

VREG

PWRGND

Figure 1. Charge Pump Block Diagram

© Semiconductor Components Industries, LLC, 2005

1

September, 2005 − Rev. 1

Publication Order Number:

NIS6201/D

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