NIS6201(2004) Просмотр технического описания (PDF) - ON Semiconductor
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NIS6201 Datasheet PDF : 4 Pages
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NIS6201
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Floating, Regulated Charge
Pump
The NIS6201 charge pump is designed to provide economical, low
level power to circuits above ground level potential, such as the drive
for ORing diodes. It is a very cost−effective replacement for a small,
isolated, switching power supply.
It contains an internal linear regulator, and a versatile charge pump
to allow bias voltage supplies to be transferred from a ground
referenced source to a higher potential. The design of the charge
pump allows for any isolation voltage required, as the high voltage
components are external to the pump and can be sized accordingly.
Features
• Integrated Linear Regulator and Charge Pump
• Thermal Limit Protection
• Adjustable Voltage Output
• High Voltage Isolation
Applications
• ORing Diodes
• Floating Supervisory Circuits
• LED Driver
VCC
0.50 V
+
−
Regulator
30 V
+
−
50 mV
Overcharge
1.0 MHz
Oscillator
Drive
http://onsemi.com
8
1
SOIC−8 NB
CASE 751
MARKING
DIAGRAM
8
TBD
ALYW
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN CONNECTIONS
PWRGND 1
PWRGND 2
SIGGND 3
COMP 4
8 PWRGND
7 DRIVE
6 VREG
5 VCC
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
TBD
SOIC−8
TBD
Comp
Vreg
Gnd
Figure 1. Charge Pump Block Diagram
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. P2
Publication Order Number:
NIS6201/D
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