NE4210S01-T1 Просмотр технического описания (PDF) - California Eastern Laboratories.

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NE4210S01-T1

SUPER LOW NOISE HJ FET

California Eastern Laboratories. 

NE4210S01 NONLINEAR MODEL

Note:

This non-linear model was developed for the NE3210S01 and is

generally applicable for NE4210S01 designs.

SCHEMATIC

CGD_PKG

0.001pF

GATE

Ldx

Lgx

Rgx 0.72nH

6 ohms

CGS_PKG

0.04pF

Q1 0.68nH Rdx

6 ohms

Lsx

0.1nH

Rsx

0.06 ohms

DRAIN

CDS_PKG

0.035PF

NE4210S01

SOURCE

FET NONLINEAR MODEL PARAMETERS (1)

UNITS

Parameters

Q1

Parameters

Q1

VTO

-0.798

RG

8

VTOSC

0

RD

0.5

ALPHA

8

RS

3

BETA

0.0952

RGMET

0

GAMMA

0.072

KF

0

GAMMADC

0.065

AF

1

Q

2.5

TNOM

27

DELTA

0.5

XTI

3

VBI

0.6

EG

1.43

IS

1e-14

VTOTC

0

N

1

BETATCE

0

RIS

0

FFE

1

RID

0

TAU

4e-12

CDS

0.12e-12

RDB

5000

CBS

1e-9

CGSO

0.36e-12

CGDO

0.014e-12

DELTA1

0.3

DELTA2

0.6

FC

0.5

VBR

Infinity

(1) Series IV Libra TOM Model

Parameter

time

capacitance

inductance

resistance

voltage

current

Units

seconds

farads

henries

ohms

volts

amps

MODEL RANGE

Frequency: 0.1 to 22.5 GHz

Bias:

Date:

VDS = 1 V to 3 V, ID = 5 mA to 30 mA

1/99

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably

be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and

agree to fully indemnify CEL for all damages resulting from such improper use or sale.

09/12/2005

A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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