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MX29F8100

8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

Macronix International 

INDEX

MX29F8100

READ/RESET COMMAND

The read or reset operation is initiated by writing the read/

reset command sequence into the command register.

Microprocessor read cycles retrieve array data from the

memory. The device remains enabled for reads until the

CIR contents are altered by a valid command sequence.

The device will automatically power-up in the read/reset

state. In this case, a command sequence is not required

to read data. Standard microprocessor read cycles will

retrieve array data. This default value ensures that no

spurious alteration of the memory content occurs during

the power transition. Refer to the AC Read

Characteristics and Waveforms for the specific timing

parameters.

The MX29F8100 is accessed like an EPROM. When CE

and OE are low and WE is high the data stored at the

memory location determined by the address pins is

asserted on the outputs. The outputs are put in the high

impedance state whenever CE or OE is high. This dual

line control gives designers flexibility in preventing bus

contention.

CE stands for the combination of CE1 and CE2 in 48-pin

TSOP package. CE stands for CE1 in 44-pin SOP

package.

Note that the read/reset command is not valid when

program or erase is in progress.

PAGE PROGRAM

To initiate Page program mode, a three-cycle command

sequence is required. There are two " unlock" write

cycles. These are followed by writing the page program

command-A0H.

Any attempt to write to the device without the three-cycle

command sequence will not start the internal Write State

Machine(WSM), no data will be written to the device.

After three-cycle command sequence is given, a

byte(word) load is performed by applying a low pulse on

the WE or CE input with CE or WE low (respectively) and

OE high. The address is latched on the falling edge of CE

or WE, whichever occurs last. The data is latched by the

first rising edge of CE or WE. Maximum of 128 bytes of

data may be loaded into each page by the same

procedure as outlined in the page program section below.

BYTE-WIDE LOAD/WORD-WIDE LOAD

Byte(word) loads are used to enter the 128 bytes(64

words) of a page to be programmed or the software codes

for data protection. A byte load(word load) is performed

by applying a low pulse on the WE or CE input with CE or

WE low (respectively) and OE high. The address is

latched on the falling edge of CE or WE, whichever occurs

last. The data is latched by the first rising edge of CE or

WE.

Either byte-wide load or word-wide load is

determined(Byte = VIL or VIH is latched) on the falling

edge of the WE(or CE) during the 3rd command write

cycle.

PROGRAM

Any page to be programmed should have the page in the

erased state first, i.e. performing sector erase is

suggested before page programming can be performed.

The device is programmed on a page basis. If a

byte(word) of data within a page is to be changed, data for

the entire page can be loaded into the device. Any

byte(word) that is not loaded during the programming of

its page will be still in the erased state (i.e. FFH). Once

the bytes of a page are loaded into the device, they are

simultaneously programmed during the internal

programming period. After the first data byte(word) has

been loaded into the device, successive bytes(words)

are entered in the same manner. Each new byte(word)

to be programmed must have its high to low transition on

WE (or CE) within 30us of the low to high transition of WE

(or CE) of the preceding byte(word). A6 to A18 specify

the page address, i.e., the device is page-aligned on 128

bytes(64 words)boundary. The page address must be

valid during each high to low transition of WE or CE. A-1

to A5 specify the byte address within the page, A0 to A5

specify the word address withih the page. The

byte(word) may be loaded in any order; sequential

loading is not required. If a high to low transition of CE or

WE is not detected whithin 100us of the last low to high

transition, the load period will end and the internal

programming period will start. The Auto page program

terminates when status on DQ7 is '1' at which time the

device stays at read status register mode until the CIR

contents are altered by a valid command

sequence.(Refer to table 3,6 and Figure 1,7,8)

P/N: PM0262

REV. 2.0, JAN. 22, 1999

9

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