MW7IC2220GNR1(2008) Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC2220GNR1
(Rev.:2008)

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Zo = 50 Ω

f = 2220 MHz

Zload

f = 2060 MHz

f = 2060 MHz

f = 2220 MHz

Zin

VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg.

f

Zin

MHz

W

Zload

W

2060

49.57 - j3.62

11.06 - j3.26

2080

49.49 - j3.77

10.83 - j2.96

2100

49.42 - j3.94

10.55 - j2.62

2120

49.35 - j4.12

10.30 - j2.23

2140

49.30 - j4.29

10.08 - j1.86

2160

49.25 - j4.48

9.86 - j1.51

2180

49.21 - j4.67

9.65 - j1.13

2200

49.17 - j4.86

9.45 - j0.76

2220

49.15 - j5.06

9.25 - j0.40

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Device

Under

Test

Output

Matching

Network

RF Device Data

Freescale Semiconductor

Z in

Z load

Figure 15. Series Equivalent Input and Load Impedance

MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

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