MTB2P50E Просмотр технического описания (PDF) - ON Semiconductor
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MTB2P50E Datasheet PDF : 8 Pages
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MTB2P50E
TYPICAL ELECTRICAL CHARACTERISTICS
4
TJ = 25°C
3.5
3
2.5
VGS = 10 V
7V
8V
6V
2
1.5
5V
1
0.5
0
0
4
4V
8
12
16
20
24
28
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
VDS ≥ 10 V
3.5
3
2.5
2
TJ = − 55°C
100°C
25°C
1.5
1
0.5
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
VGS = 10 V
8
6
4
2
TJ = 100°C
25°C
− 55°C
0
0
0.5 1
1.5
2
2.5 3
3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
6
TJ = 25°C
5.75
5.5
5.25
5
VGS = 10 V
4.75
15 V
4.5
4.25
4
0 0.5 1
1.5
2
2.5 3
3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
ID = 1 A
1.5
1000
VGS = 0 V
100
TJ = 125°C
100°C
1
10
25°C
0.5
− 50 − 25 0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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