MSC82003 Просмотр технического описания (PDF) - Advanced Semiconductor
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MSC82003 Datasheet PDF : 2 Pages
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MSC82003
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC82003 is Designed for
General Purpose Class C Power
Amplifier Applications up to 2300 MHz.
FEATURES:
• PG = 10 dB min. at 3 W/ 2,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
600 mA
VCC
PDISS
TJ
TSTG
θJC
35 V
21.8 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
15 OC/W
PACKAGE STYLE .250 2L FLG
A
ØD
C
B
E
.060 x 45°
CHAMFER
G
L
H
F
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.028 / 0.71
.032 / 0.81
B
.740 / 18.80
C
.245 / 6.22
.255 / 6.48
D
.128 / 3.25
.132 / 3.35
E
.125 / 3.18
F
.110 / 2.79
.117 / 2.97
G
.117 / 2.97
H
.560 / 14.22
.570 / 14.48
I
.790 / 20.07
.810 / 20.57
J
.225 / 5.72
.235 / 5.97
K
.165 / 4.19
.185 / 4.70
L
.003 / 0.08
.007 / 0.18
M
.058 / 1.47
.068 / 1.73
N
.119 / 3.02
.135 / 3.43
P
.149 / 3.78
.187 / 4.75
Common Base
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
1.0
15
120
UNITS
V
V
V
mA
---
Cob
VCB = 28 V
f = 1.0 MHz
3.5
pF
PG
ηC
VCC = 28 V
POUT = 3.0 W
f = 2.0 GHz
10
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
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