MS3302 Просмотр технического описания (PDF) - Advanced Power Technology
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MS3302 Datasheet PDF : 4 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
Features
• 3.0 GHz
• GOLD METALIZATION
• EMITTER BALLASTED
• POUT = 4.5 W MINIMUM
• GP = 4.5 dB
• ∞:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
MS3302
DESCRIPTION:
The MS3302 is a common base silicon NPN microwave transistor
designed for general purpose applications over the 1.0 – 3.0 GHz
frequency range. The MS3302 utilizes an emitter ballasted die
geometry for maximum load VSWR capability under rated
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
VCC
IC
TJ
TSTG
Parameter
Power Dissipation
Collector-Supply Voltage
Device Current
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
*Applies only to rated RF amplifier operation
Value
17.6
30
700
200
-65 to +200
8.5
Unit
W
V
mA
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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