MS1281 Просмотр технического описания (PDF) - Advanced Power Technology
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производитель
MS1281 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
FM BROADCAST APPLICATIONS
Features
• 108 MHz
• 28 VOLTS
• GOLD METALLIZATION
• POUT = 150 WATTS
• GP = 9.2dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1281 is a 28V silicon NPN planar transistor
designed primarily for VHF FM broadcast transmitters.
Diffused emitter ballast provide infinite VSWR capability
under rated operating conditions.
MS1281
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PD
Tj
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Value
60
25
60
4.0
16
230
200
-65 to +150
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.75
MS1281.PDF 5-8-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
V
A
W
°C
°C
° C/W
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