MMPQ3904(2001) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MMPQ3904
(Rev.:2001)

Quad Amplifier/Switch Transistor

ON Semiconductor 

MMPQ3904

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

ON CHARACTERISTICS(1)

Symbol

Min

Typ

Max

Unit

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

hFE

VCE(sat)

—

30

90

—

50

160

—

75

200

—

—

0.1

0.2

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VBE(sat)

—

0.65

0.85

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

250

300

—

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

2.0

4.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

4.0

8.0

pF

SWITCHING CHARACTERISTICS

Turn–On Time

(IC = 10 Vdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc)

ton

—

37

—

ns

Turn–Off Time

(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

toff

—

136

—

ns

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

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