MMDF3N04HDR2 Просмотр технического описания (PDF) - ON Semiconductor
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MMDF3N04HDR2 Datasheet PDF : 12 Pages
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MMDF3N04HD
TYPICAL ELECTRICAL CHARACTERISTICS
6 VGS =
10 V
5
4
3
3.9 V
4.5 V
4.3 V
4.1 V
TJ = 25°C
3.7 V
3.5 V
2
3.3 V
1
2.7 V
3.1 V
2.9 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
6
VDS ≥ 10 V
5
TJ = 25°C
4
3
100°C
2
25°C
1
TJ = −55°C
0
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
ID = 3.4 A
0.5
TJ = 25°C
0.1
0.095
0.09
TJ = 25°C
0.4
0.085
VGS = 4.5
0.08
0.3
0.075
0.07
0.2
0.065
0.1
0.06
10 V
0.055
0
0.05
2
3
4
5
6
7
8
9 10
0
1
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 3.4 A
1.5
1.0
0.5
100
VGS = 0 V
10
1
TJ = 125°C
100°C
25°C
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation
with Temperature
0.1
0
5
10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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