High Voltage Transistors
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA42
MMBTA43
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
MMBTA42
MMBTA43
MMBTA42
MMBTA43
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42
MMBTA43
Symbol
Min
V(BR)CEO
300
200
V(BR)CBO
300
200
V(BR)EBO
6.0
ICBO
−
−
IEBO
−
−
hFE
25
40
40
40
VCE(sat)
−
−
VBE(sat)
−
fT
50
Ccb
−
−
Max
Unit
Vdc
−
−
Vdc
−
−
−
Vdc
mAdc
0.1
0.1
mAdc
0.1
0.1
−
−
−
−
−
Vdc
0.5
0.5
0.9
Vdc
−
MHz
pF
3.0
4.0
MDS0605002A
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