MMBTA05 Просмотр технического описания (PDF) - TAITRON Components Incorporated
Номер в каталоге
Компоненты Описание
производитель
MMBTA05 Datasheet PDF : 3 Pages
| |||
SMD General Purpose Transistor (NPN)
MMBTA05/MMBTA06
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
hFE
D.C. Current Gain
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off Current
ICBO
Collector-Base Cut-off Current
fT
Current Gain-Bandwidth Product
MMBTA05
Min. Max.
100
-
100
-
60
-
4.0
-
-
0.25
-
1.2
-
0.1
-
0.1
VCB=60V, IE=0
100
-
MMBTA06
Unit
Min. Max.
100
-
100
-
80
-
V
4.0
-
V
-
0.25
V
-
1.2
V
-
0.1
μA
-
0.1
μA
VCB=80V, IE=0
100
-
MHz
Conditions
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=1mA, IB=0
IE=100µA, IC=0
IC=100mA, IB=10mA
IC=100mA, VCE=1.0V
VCE=60V, IB=0
VCE=2V, IC=10mA,
f=100MHz
www.taitroncomponents.com
Rev. A/AH 2008-01-10
Page 2 of 3
Share Link: 