MMBT5401 Просмотр технического описания (PDF) - Secos Corporation.
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MMBT5401 Datasheet PDF : 3 Pages
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Elektronische Bauelemente
MMBT5401
PNP Silicon
General PurposeTransistor
CHARACTERISTICS CURVE
200
150
TJ = 125 C
100
25 C
70
50
-55 C
30
VCE = -1.0 V
VCE = -5.0 V
20
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (mA)
20 30
50
100
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
IC = 1.0 mA
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
103
VCE = 30 V
102
101
TJ = 125 C
100
75 C
10-1
REVERSE
10-2
25 C
IC = ICES
FORWARD
10-3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut-Off Region
01-June-2002 Rev. A
Page 2 of 3
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