MMBT4403 Просмотр технического описания (PDF) - General Semiconductor

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производитель

MMBT4403

SMALL SIGNAL TRANSISTORS (PNP)

General Semiconductor 

MMBT4403

ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

MAX.

UNIT

Voltage Feedback Ratio

at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz

hre

0.1 á 10Ð4

8 á 10Ð4

Ð

Small Signal Current Gain

at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz

hfe

60

500

Ð

Output Admittance

at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz

hoe

1.0

100

mS

Delay Time

at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V, ÐVEB = 2 V

td

Ð

15

ns

Rise Time

at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V, ÐVEB = 2 V

tr

Ð

20

ns

Storage Time

at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V

ts

Ð

225

ns

Fall Time

at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V

tf

Ð

30

ns

SWITCHING TIME EQUIVALENT TEST CIRCUIT

FIGURE 1 - TURN-ON TIME

+16 V

0

-2 V

1.0 to 100 ms, DUTY CYCLE Å 2%

1kW

< 2 ns

+30V

200W

CS* < 10 pF

Scope rise time < 4ns

*Total shunt capacitance of test jig,

connectors and oscilloscope

+16 V

0

-14 V

FIGURE 2 - TURN-OFF TIME

1.0 to 100 ms, DUTY CYCLE Å 2%

+30V

200W

< 20 ns

1kW

-4 V

CS* < 10 pF

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